Method of improving the pyrolytic deposition rate of copper...

B - Operations – Transporting – 05 – D

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B05D 1/12 (2006.01) C03C 17/06 (2006.01) C03C 17/23 (2006.01) C03C 17/34 (2006.01) H01L 21/02 (2006.01)

Patent

CA 2073990

ABSTRACT OF THE DISCLOSURE A pyrolitic deposition process, for pyrolitic deposition of organo-cupric powder to form copper oxide film, is improved. A substrate is heated, and organo- cupric powder is sprayed at the substrate, using oxygen gas as the carrier gas. Up to one-third greater deposition rate results, as compared to the process using compressed air as the carrier gas. -5-

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