Method of information recording on a semiconductor wafer

Details Method of information recording on a semiconductor wafer Method of information recording on a semiconductor wafer

G - Physics

11

B

352/32.1, 352/33

G11B 9/10 (2006.01) G03C 1/705 (2006.01) G11B 7/00 (2006.01) G11B 7/241 (2006.01) G11B 9/08 (2006.01) G11B 11/00 (2006.01) G11C 11/23 (2006.01) G11C 13/04 (2006.01) H01L 31/08 (2006.01) H04N 1/21 (2006.01)

Patent

CA 1188802

- 1 - Abstract An information recording method is disclosed in which a p- or n-type semiconductor wafer is irradiated with an energetic beam such as an electron beam whereby to control, e.g., decrease or increase, the generation of a surface photovoltage at the irradiated area. Information can thus be recorded on the wafer.

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