Method of ion implantation through a photoresist mask

Details Method of ion implantation through a photoresist mask Method of ion implantation through a photoresist mask

C - Chemistry, Metallurgy

30

B

148/2.8

C30B 35/00 (2006.01) G03F 7/40 (2006.01) H01L 21/00 (2006.01) H01L 21/56 (2006.01)

Patent

CA 1043667

A METHOD OF ION IMPLANTATION THROUGH A PHOTORESIST MASK Abstract of the Invention An improvement in the method of ion implanta- tion into a semiconductor substrate through a photoresist mask wherein the photoresist mask is subjected to an RF gas plasma oxidation prior to the ion implantation step for a period sufficient to reduce the thickness of the photoresist layer. The ion implantation is then carried out through the treated photoresist mask.

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