Method of laser annealing of subsurface ion implanted regions

Details Method of laser annealing of subsurface ion implanted regions Method of laser annealing of subsurface ion implanted regions

H - Electricity

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L

148/3.4

H01L 21/428 (2006.01) H01L 21/268 (2006.01) H01L 21/74 (2006.01)

Patent

CA 1189768

ABSTRACT A METHOD OF LASER ANNEALING OF SUBSURFACE ION IMPLANTED REGIONS A method for annealing ion implanted regions buried in a semiconductor substrate without the undesirable effects of thermal diffusion which includes the radiation of the substrate by a continuous laser having an emission frequency longer than 600 nanometers which the buried ion implanted regions will absorb strongly but which will be substantially unabsorbed by the unimplanted regions. Superior results can be obtained when the substrate is heated to approximately 300° dur- ing this laser annealing.

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