Method of making a charge transfer device

Details Method of making a charge transfer device Method of making a charge transfer device

H - Electricity

01

L

356/197

H01L 29/76 (2006.01) H01L 21/339 (2006.01) H01L 29/10 (2006.01) H01L 29/768 (2006.01)

Patent

CA 1111138

ABSTRACT OF THE DISCLOSURE A method of making a charge transfer device which has charge transfer portions arranged in a semiconductor substrate, each of said charge transfer portions having electrodes, and in which an effective asymmetrical potential is produced in each of the charge transfer portions in a carrier transfer direction by the affect of potential of channel stopper regions upon charge transfer. The method has the steps of forming channel stopper regions, which define a charge transfer line, in the substrate, forming a first polycrystalline semiconductor layer which becomes a first gate electrode of every second charge transfer portion, forming a second polycrystalline semiconductor layer which becomes a second gate electrode of the other of every second charge trans- fer portion, and forming a portion which is extended from at least the channel stopper region and produces the asymmetrical potential, by selectively doping an impurity into the substrate with the first and second polycrystalline semiconductor layers as a doping mask.

288640

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