Method of making a duo-density silicon nitride article

Details Method of making a duo-density silicon nitride article Method of making a duo-density silicon nitride article

C - Chemistry, Metallurgy

04

B

25/133

C04B 35/58 (2006.01) C04B 35/591 (2006.01) C04B 35/593 (2006.01) F01D 5/34 (2006.01)

Patent

CA 1079935

METHOD OF MAKING A DUO-DENSITY SILICON NITRIDE ARTICLE Abstract of the Disclosure A method of making a duo-density article of silicon nitride is disclosed. A first element is made of silicon metal particles. The first element is nitrided so that the silicon particles are transformed into sub- stantially pure silicon nitride. All but a bonding surface of the first element is encapsulated to form a die member. The die member is placed in a pressing die structure so that its bonding surface forms a portion of the internal surface of the die volume. The die volume of the die structure is filled with a mixture consisting of silicon nitride particles and a densification aid. The mixture is compacted in the die volume to at least 98% of theoretical density thereby forming a second element of the duo-density article while simultaneously bonding the second element to the first element along the first element's bonding surface. The encapsulant is removed from the first element to produce the final article of silicon nitride having two zones of different density.

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