Method of making a masking layer

Details Method of making a masking layer Method of making a masking layer

H - Electricity

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356/182

H01L 21/467 (2006.01) H01L 21/314 (2006.01) H01L 21/318 (2006.01)

Patent

CA 1078972

METHOD OF MAKING A MASKING LAYER ABSTRACT The invention relates to a method of making a masking layer for silicon semiconductor bodies, where layers consisting of silicon dioxide and of silicon nitride are arranged one directly above the other on the surface of a semiconductor body.

268095

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