Method of making a passivated semiconductor device

Details Method of making a passivated semiconductor device Method of making a passivated semiconductor device

H - Electricity

01

L

345/27, 204/96.0

H01L 21/306 (2006.01) H01L 21/314 (2006.01) H01L 21/318 (2006.01) H01L 31/0216 (2006.01)

Patent

CA 1297834

METHOD OF MAKING A PASSIVATED SEMICONDUCTOR DEVICE ABSTRACT OF THE DISCLOSURE A method of making a semiconductor device including forming regions of first and second conductivity types with a semiconductor junction therebetween which extends to a surface of the device, and depositing a passivating layer over the surface to overlie the junction, further comprises a pretreatment of the surface to enhance the electrical properties of the device and the effectiveness of the passivating layer. The pretreatment, carried out prior to deposition of the passivating layer, includes treating the surface with an aqueous ammonium fluoride-hydrogen fluoride solution and thereafter subjecting the surface to a plasma in an oxygen-free, nitrogen-containing ambient.

525934

Affiliated with

Also associated with

Rating

Method of making a passivated semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a passivated semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a passivated semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1171437