Method of making a photoconductive member and improved...

Details Method of making a photoconductive member and improved... Method of making a photoconductive member and improved...

H - Electricity

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H01L 31/00 (2006.01) C23C 16/511 (2006.01) G03G 5/082 (2006.01) H01L 31/0376 (2006.01) H01L 31/09 (2006.01) H01L 31/20 (2006.01)

Patent

CA 1241617

ABSTRACT OF THE DISCLOSURE A process for making photoconductive semicon- ductor alloys and members with high reaction gas conversion efficiencies and at high deposition rates utilizes microwave energy to form a deposi- tion plasma. The high deposition rates and high gas conversion efficiencies allow photoconductive members to be formed of amorphous semiconductor alloys at commercially viable rates. The process includes coupling microwave energy into a substantially enclosed reaction ves- sel containing a substrate and depositing amor- phous photoconductive alloys onto the substrate from a reaction gas introduced into the vessel. The photoconductive member includes a bottom blocking layer, a photoconductive layer and a top blocking layer. The photoconductive member can be formed in a negative or positive charge type con- figuration. The members can include a top block- ing enhancement layer and/or an improved infrared photoresponsive layer.

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