Method of making a photonic band gap structure

Details Method of making a photonic band gap structure Method of making a photonic band gap structure

G - Physics

02

B

G02B 6/136 (2006.01) G02B 1/02 (2006.01) G02B 6/13 (2006.01)

Patent

CA 2387980

A process by which photonic band gap structures are created by etching trenches in indium gallium arsenide, preferentially in filling the trenches with indium phosphide and forming multiple layers of interleaved regions of indium gallium arsenide and indium phosphide.

Cette invention concerne un procédé de réalisation de structures à bande photonique interdite. Ce procédé consiste à réaliser des tranchées dans de l'indium gallium arséniure, de préférence à remplir ces tranchées de phosphure d'indium et à former des régions entrelacées d'indium gallium arséniure et de phosphure d'indium.

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