Method of making a semiconductor device

Details Method of making a semiconductor device Method of making a semiconductor device

H - Electricity

01

L

356/178

H01L 21/20 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1090480

ABSTRACT : The invention relates to a method of manufacturing a semiconductor device in which a mixture consisting of at least two semicon- ductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. According to the invention, the compo- sition of the mixture is determined during the deposition by means of measurement of the thermal emission. -10-

278299

Affiliated with

Also associated with

Rating

Method of making a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-673172