H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/163
H01L 27/06 (2006.01) H01L 21/00 (2006.01) H01L 21/033 (2006.01) H01L 21/302 (2006.01) H01L 21/86 (2006.01)
Patent
CA 1040322
Abstract of the Disclosure A semiconductor structure from which various types of active semiconductor devices can be formed is made of a semiconductor island on a transparent substrate, having thereon an electrically insulating layer of a protective material, such as silicon dioxide, which extends onto and covers the sides of the semiconductor island. The protec- tive layer can either cover only the sides of the semi- conductor island or extend over the top edge of the island. The structure wherein the protective layer covers only the sides of the island is made by etching through a photoresist mask made of a negatively reacting photoresist which is formed by exposure to irradiation from beneath the uncovered surface of the substrate, whereby the thickness of the silicon island and the flux density of the irradiation are selected so that for a particular duration, the irradiation is completely attenuated by the semiconductor island. This causes photoresist not on the top of the island to be exposed. Regions of the protective material above the surface of the island which are not protected by the photo- resist mask are etched away. - 1 -
231885
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