Method of making a strain buffer for a semiconductor device

Details Method of making a strain buffer for a semiconductor device Method of making a strain buffer for a semiconductor device

H - Electricity

01

L

356/184

H01L 23/34 (2006.01) H01L 21/48 (2006.01) H01L 23/051 (2006.01) H01L 23/492 (2006.01)

Patent

CA 1149085

ABSTRACT OF THE DISCLOSURE A thermally and electrically conductive strain buffer for a semiconductor device is made by a method that comprises the steps of (a) providing a plurality of straight, equal-length strands of copper, with the strands aligned such that their lengths are substantially parallel and their ends defined a pair of opposing surfaces and (b) closing packing the strands together. Then, layers of highly conductive metal are deposited on said opposing surfaces, and the deposited metal layers provide sufficient structural integrity to hold the strands together so that the resulting strain buffer can be manipulated with substantially no break-up thereof and with substantially no loss of individual ones of the strands.

359259

Affiliated with

Also associated with

Rating

Method of making a strain buffer for a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making a strain buffer for a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a strain buffer for a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1078745