Method of making amorphous semiconductor alloys and devices...

Details Method of making amorphous semiconductor alloys and devices... Method of making amorphous semiconductor alloys and devices...

C - Chemistry, Metallurgy

23

C

117/74, 204/96.3

C23C 16/22 (2006.01) C23C 16/511 (2006.01) H01J 37/32 (2006.01) H01L 21/205 (2006.01)

Patent

CA 1219240

ABSTRACT A process for making amorphous semiconductor alloy films and devices at high deposition rates utilizes microwave energy to form a deposition plasma. The alloys exhibit high quality electron- ic properties suitable for many applications in- cluding photovoltaic applications. The process includes the steps of providing a source of microwave energy, coupling the microwave energy into a substantially enclosed reaction ves- sel containing the substrate onto which the amor- phous semiconductor film is to be deposited, and introducing into the vessel reaction gases includ- ing at least one semiconductor containing com- pound. The microwave energy and the reaction gases form a glow discharge plasma within the ves- sel to deposit an amorphous semiconductor film from the reaction gases onto the substrate. The reaction gases can include silane (SiH4), silicon tetrafluoride (SiF4), silane and silicon tetra- fluoride, silane and germane (GeH4), and silicon tetrafluoride and germane. The reaction gases can also include germane or germanium tetrafluoride (GeF4). To all of the foregoing, hydrogen (H2) can also be added. Dopants, either p-type or n-type can also be added to the reaction gases to form p-type or n-type alloy films, respectively. Also, band gap increasing elements such as carbon or nitrogen can be added in the form of, for exam- ple, methane or ammonia gas to widen the band gap of the alloys.

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