Method of making an article comprising a buried sio _layer,...

Details Method of making an article comprising a buried sio _layer,... Method of making an article comprising a buried sio _layer,...

H - Electricity

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H01L 21/265 (2006.01) C30B 31/22 (2006.01) H01L 21/76 (2006.01)

Patent

CA 1299069

-11- METHOD OF MAKING AN ARTICLE COMPRISING A BURIED SiO2 LAYER, AND ARTICLE PRODUCED THEREBY Abstract We have discovered that high quality subcritical SIMOX silicon-on- insulator wafers can be produced by a method that comprises a randomizing implant followed by an appropriate heat treatment. In a preferred embodiment, the inventive method comprises, in succession, a subcritical oxygen implant (nominal wafer temperature <350°C) into a (100) Si wafer, a low temperature (500-700°C) anneal, a high temperature (> 1200°C) anneal, a randomizing implant (~ 5x1014 Si/cm2, nominal wafer temperature < 100°C), and a low temperature anneal (nominal wafer temperature between 500 and 700°C). The resulting buried SiO2 layer typically is relatively thin (e.g., 60 nm), stoichiometric, continuous, and essentially free of Si inclusions, and the Si overlayer typically is of device quality and essentially free of twins, with Xmin~ 3%.

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