H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/142, 356/197
H01L 21/265 (2006.01) C30B 31/22 (2006.01) H01L 21/74 (2006.01) H01L 23/48 (2006.01)
Patent
CA 1332695
-17- METHOD OF MAKING AN ARTICLE COMPRISING A HETEROEPITAXIAL STRUCTURE, AND ARTICLE PRODUCED THEREBY Abstract Disclosed is a technique, formed "mesotaxy", for producing a heteroepitaxial structure comprising a layer of single crystal second material embedded in, and epitaxial with, a single crystal first material matrix. Mesotaxy comprises implantation of at least one chemical species (e.g., Co, Ni, Cr, Y or Mg) into a single crystal body (typically a semiconductor, e.g., Si or Ge) such that a buried layer rich in the implanted species is formed, and heat treating the implanted body such that a buried stoichiometric compound layer (e.g., CoSi2) isformed. Exemplarily, 3 ? 1017/cm2 200 keV Co ions are implanted into (100) Si nominally at 350°C, followed by a heat treatment that consists of 1 hour at 600°C and 30 minutes at 1000°C. The resulting buried CoSi2 layer is epitaxial with the Si matrix, has high conductivity and is of good crystalline quality. The Si overlayer is of device quality. The thus produced heteroepitaxial structure can then be used to produce semiconductor devices, e.g., MOSFETs with a buried ground plane.
552552
Dynes Robert Carr
Short Kenneth Thomas
White Alice Elizabeth
American Telephone And Telegraph Company
Kirby Eades Gale Baker
LandOfFree
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