C - Chemistry – Metallurgy – 25 – D
Patent
C - Chemistry, Metallurgy
25
D
C25D 5/00 (2006.01) C23C 14/34 (2006.01) H01L 23/473 (2006.01) H05K 7/20 (2006.01)
Patent
CA 2570847
A method is provided. The method includes forming a conductive layer on an inner surface of a substrate (12) and providing a sacrificial layer (36) over the conductive layer. The method includes forming a plurality of channels in the sacrificial layer (36) and plating the sacrificial layer to substantially fill the plurality of channels with a plating material comprising conducting material. The method also includes etching the sacrificial layer (36) to form a conducting structure having fins where conducting material remains separated by microchannels where the sacrificial layer (36) is etched.
Balch Ernest Wayne
Durocher Kevin Matthew
Goodwin Stacey Joy
Kapusta Christopher James
Company General Electric
Craig Wilson And Company
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