G - Physics – 03 – C
Patent
G - Physics
03
C
96/191, 96/250,
G03C 1/00 (2006.01) G03C 5/00 (2006.01) G03F 1/00 (2006.01) G11B 7/0045 (2006.01) G11B 7/243 (2006.01) G11B 7/26 (2006.01)
Patent
CA 1036859
Abstract of the Disclosure An improved process for forming an embossed pattern through the use of a writting concentrated beam opening holes in a film capable of undergoing residue free evapora- tion. A layer of photoresist is overlayed with the film and upon being exposed and processed the layer supplies the pros- pective embossed pattern.
190410
Dubois Jean C.
Duda Eugene
Marchal Michel
Picquendar Jean E.
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