Method of making an ic structure having both power and...

Details Method of making an ic structure having both power and... Method of making an ic structure having both power and...

H - Electricity

01

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356/130

H01L 21/78 (2006.01) H01L 27/082 (2006.01) H01L 29/08 (2006.01)

Patent

CA 1056070

ABSTRACT OF THE DISCLOSURE An integrated circuit and method in which optimized power and signal components are incorporated into a mono- lithic structure. A suitable semiconductor substrate has an epitaxial layer of one conductivity type and having a relatively high resistivity formed thereon. Isolation means extend through the epitaxial layer and separate it into at least a signal transistor region and a power transistor region. A diffused pocket region is formed in the signal transistor region of the same conductivity type as the epitaxial layer but doped so as to provide a region of relatively low resistivity. A power transistor is formed in the relatively high resistivity power transistor region and a signal transistor is formed in the relatively low resistivity diffused pocket region.

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