Method of making crack-free insulating films with sog...

Details Method of making crack-free insulating films with sog... Method of making crack-free insulating films with sog...

H - Electricity

01

L

356/162

H01L 21/469 (2006.01) G02B 6/02 (2006.01) H01L 21/768 (2006.01) H01L 23/532 (2006.01)

Patent

CA 2006174

ABSTRACT OF THE DISCLOSURE A method of fabricating a semiconductor device is disclosed wherein a first dielectric layer is applied over an interconnect layer having tracks defining a conductive pattern, the first dielectric layer forming valleys between the tracks of the interconnect layer, spin-on glass is applied over said first layer to planarize it by forming spin-on glass zones in the valleys defined by the first dielectric layer, and a second layer is applied to the planarized first layer, whereby the first and second layers and said spin-on glass zones form a composite multi-layer film. The first layer is formed such that it has compressive stress at room temperature to prevent cracking in the composite multi-layer film during subsequent heat treatment. The second layer can be another dielectric layer or a further interconnect layer applied directly to the first layer and SOG planarization layer. The method can also be applied to other fields, such as the manufacture of optical fibers, emission diodes and the like.

Affiliated with

Also associated with

Rating

Method of making crack-free insulating films with sog... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making crack-free insulating films with sog..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making crack-free insulating films with sog... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2031262