H - Electricity – 01 – L
Patent
H - Electricity
01
L
345/22
H01L 31/02 (2006.01) H01L 27/14 (2006.01) H01L 27/142 (2006.01) H01L 31/0224 (2006.01) H01L 31/072 (2006.01) H01L 31/18 (2006.01)
Patent
CA 1231164
ABSTRACT METHOD OF MAKING CURRENT COLLECTOR GRID AND MATERIALS THEREFOR A large area photovoltaic device having a transparent front contact is made more efficient by a current collector grid formed over the transparent front contact to decrease the series resistance of the device. Where the front contact is between a transparent substrate and the semiconductor layers of the photovoltaic device, the collector grid is embedded in the semiconductor layers. To prevent leakage of current into the collector grid from one semiconductor layer, the collector grid material is selected to form a Schottky barrier junction with that semiconductor layer that blocks the flow of the leakage current. The process for preparing such thin film photovoltaic devices includes etching channels in the semiconductor layers, depositing the collector grid material in the channels, insulating the grid, and depositing a back electrical contact film. This process has several advantages, particularly when those materials for the collector grid are not compatible with the deposition processes of the semiconductor layers.
496495
Bp Photovoltaics Ltd.
Gowling Lafleur Henderson Llp
Sohio Commercial Development Company
LandOfFree
Method of making current collector grid and materials therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making current collector grid and materials therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making current collector grid and materials therefor will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1214232