H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/149, 356/73
H01L 21/31 (2006.01) H01L 21/265 (2006.01) H01L 21/316 (2006.01) H01L 21/762 (2006.01) H01L 29/06 (2006.01)
Patent
CA 1095179
METHOD OF MAKING FIELD EFFECT TRANSISTOR Abstract of the Disclosure A fabrication method for providing electrical isolation between transistors such as field effect transistors (FETs) which are fabricated on the same semiconductive substrate is described that uses a single doping step to form both the channel stopper field doping and the FET channel doping. An example of an n-channel FET embodiment is described wherein an extra p-type doping is provided in the field region which serves to prevent parasitic conductive channels from occurring under the thick field oxide. Such parasitic channels can undesirably cause electrical shorting between adjacent FETs of an integrated circuit. Extra p-type doping is also provided in the FET channel region and serves to raise the gate threshold voltage of the enhancement-mode FET to a level suitable for integrated circuit operation. In the described method a single implatation or diffusion doping step provides both the field and channel doping regions, thereby reducing the number of processing steps. This single doping step is facilitated by use of a thick field isolation oxide which is chemically vapor deposited at a relatively low processing temperature after per- forming the common doping step.
282911
Dennard Robert H,
Rideout Vincent L.
International Business Machines Corporation
Norton Rose Or S.e.n.c.r.l. S.r.l./llp
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