Method of making high purity silicon nitride precursor

Details Method of making high purity silicon nitride precursor Method of making high purity silicon nitride precursor

C - Chemistry, Metallurgy

01

B

23/195

C01B 21/087 (2006.01) C01B 21/068 (2006.01) C01B 21/08 (2006.01) C01B 33/00 (2006.01)

Patent

CA 1260227

-19- Abstract of the Disclosure A method of economically making silicon nitride precursor, comprising: (a) reacting silicon halide vapor with liquid ammonia at a situs (i.e., at a temperature of -20 to +40°C) in an inert environment having a pressure equal to or greater than 35 psig, which environment is effectively devoid of organic contaminants, said reaction producing a mixture of precipitated silicon imide in liquid ammonia having dissolved ammonium halide; (b) extracting a portion of the mixture from the situs; and (c) separating the precipitate from the liquid of the portion. Preferably the silicon halide is SiCl4 and its vapor is brought into reaction with the liquid ammonia by way of a nonreactive carrier gas (N2 or argon). The proportioning of the SiCl4 and liquid ammonia is effective so that the exothermic heat of chloride-ammonia reaction substantially offsets the latent heat of vaporization of the ammonia into the residual carrier gas to provide a neutral heat balance or slight overall endothermic heat transfer.

534689

Affiliated with

Also associated with

Rating

Method of making high purity silicon nitride precursor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making high purity silicon nitride precursor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making high purity silicon nitride precursor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1247950