Method of making monocrystalline ternary semiconductor...

Details Method of making monocrystalline ternary semiconductor... Method of making monocrystalline ternary semiconductor...

C - Chemistry, Metallurgy

30

B

148/1.3

C30B 13/00 (2006.01)

Patent

CA 1165669

26-2-1980 1 PHB 32665 ABSTRACT: "Method of making monocrystalline ternary semiconductor material". A significant problem in making monocrystalline ternary semiconductor compound material, for example cadmium mercury telluride, is to produce useful quantities of the material which have electrical properties within a narrow band of values, and this depends on the material having a composition within a narrow range. Monocrystalline cadmium mercury telluride may be made by preparing a melt of the material, quenching this melt so as to produce a poly- crystalline ingot 16, sealing the ingot 16 in an ampoule 13, and then forming a molten zone 20 at one end of the ingot 16 and passing this molten zone through the ingot 16 so as to form monocrystalline cadmium mercury telluride 21. The width of the molten zone 20 is from 25 to 40% of the length of the ingot 16.

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