C - Chemistry – Metallurgy – 01 – B
Patent
C - Chemistry, Metallurgy
01
B
23/184
C01B 21/082 (2006.01)
Patent
CA 1249418
-15- ABSTRACT The invention is a method of making ultrapure silicon yttrium oxynitride by using the steps of (a) in an argon stream, heating hydrated yttrium nitrate to a substantially dehydrated point; (b) adding to such heated hydrated yttrium nitrate an amount of silicon diimide to form a suspension and continuing to heat the mixture to melting so as to react the water of hydration of said nitrate with said silicon diimide and thereby form stoichiometric amounts of silica and yttrium/nitrogen/ oxygen complex; and (c) heating said silica and nitrate in an inert atmosphere to an elevated temperature and for a period of time to chemically form ultrapure silicon yttrium oxynitride. The temperature of heating the hydrated yttrium nitride can be to a range of 340-360°C which is 85-92% of the dehydration point of yttrium nitrate. The temperature to which the mass of step (c) is heated can be in the range of 1450-l600°C and the time period can be in the range of 5-6 hours.
522493
Ford Motor Company Of Canada Limited
Sim & Mcburney
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