H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 31/06 (2006.01) H01L 21/225 (2006.01) H01L 31/0216 (2006.01) H01L 31/068 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01)
Patent
CA 2084089
2084089 9119323 PCTABS00008 Doped areas on semiconductor components are made by applying to a portion of the surface of a semiconductor substrate an oxide forming mask layer which contains dopant, said semiconductor substrate with the mask layer being heated to a temperature sufficient for diffusion of part of the dopant from the mask layer to the semiconductor substrate, where also undesirable auto-doping of the unprotected surfaces of the semiconductor substrate takes place during the doping process, for which reason the auto-doped areas of the semiconductor substrate are etched away by alkaline etching or plasma etching, said mask layer constituting a protective barrier for the doped areas below the mask layer. In the production of a solar cell with two doped areas of the P and N conductor types, respectively, the distance between the two doped areas may be used for adjusting the gradient of the dark current with a diode biassed in the blocking direction.
Safir Yakov
Swabey Ogilvy Renault
LandOfFree
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