Method of making semiconductor device and apparatus therefor

Details Method of making semiconductor device and apparatus therefor Method of making semiconductor device and apparatus therefor

H - Electricity

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356/178

H01L 21/479 (2006.01) H01L 21/3063 (2006.01) H01L 21/311 (2006.01) H01L 21/316 (2006.01) H01L 21/329 (2006.01) H01L 21/338 (2006.01)

Patent

CA 1129120

Abstract of the Disclosure An epitaxial layer having a specified conductivity type formed on a semiinsulative or high resistivity semiconductor substrate or insulative substrate is anodized (anodically oxidized) by a predetermined D.C. current under an illumination of light of a predetermined intensity, thereby a depletion layer is formed beneath an oxide layer, which is formed by the anodizing, and the anodizing Ceases in areas when the bottom face of the depletion layer reaches the semiinsulative or high resistivity semiconductor substrate or insulative substrate thus retaining a layer of highly uniform thickness layer of the epitaxial grown layer on the substrate.

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