Method of making semiconductor devices

Details Method of making semiconductor devices Method of making semiconductor devices

H - Electricity

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H01L 21/203 (2006.01) H01L 21/3105 (2006.01) H01L 21/324 (2006.01)

Patent

CA 1104267

Title of the Invention Method of Making Semiconductor Devices Abstract In a step of forming a thermal oxide film or heat treatment of an oxide film in making semiconductor device comprising compound semiconductor of arsenic, the semiconductor is handled in an atmosphere containing vapor of arsenic oxide, in order to prevent evaporation of the arsenic tri-oxide in the thermal oxidation film or the oxide film under heat treatment, thereby to form thermal oxide film having a good chemical stability and good electrical characteristics or to improve the oxide film so as to have a good chemical stability and good electrical characteristics. - 1 -

307437

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