Method of making silicon carbide

Details Method of making silicon carbide Method of making silicon carbide

C - Chemistry, Metallurgy

01

B

23/54

C01B 31/36 (2006.01)

Patent

CA 1319809

C A N A D A Title: METHOD OF MAKING SILICON CARBIDE Inventor: Dr. Vladimir D. Krstic ABSTRACT OF THE DISCLOSURE A process for production of high purity, sub-micron size, silicon carbide by reacting a mixture of silica powder and carbon powder in a mixing reactor. The reactor, initially pressurized with a non-reactive gas, is indirectly heated and when the charge reaches reaction temperature a vacuum is applied. The charge is kept under a high vacuum until the reaction is complete, and is agitated to encourage release of carbon monoxide. After removal of excess carbon by low temperature oxidation, the product typically contains in excess of 99.5% silicon carbide of the beta-phase, has a surface area greater than 10m2/gm, is free of carbon and contains no detectable unreacted silica. The product requires no post production treatment such as grinding and acid leaching.

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