Method of making silicon photovoltaic

Details Method of making silicon photovoltaic Method of making silicon photovoltaic

H - Electricity

01

L

117/100, 345/22,

H01L 21/302 (2006.01) H01L 31/0224 (2006.01) H01L 31/0236 (2006.01)

Patent

CA 1101740

ABSTRACT The present specification discloses a method of making a silicon photoelectric cell, particularly solar cell, in which an N-doped Si-layer covered at one of the surfaces thereof with a metal coating serving as an electrode is coated on the other surface with a close network of Si-pyramide for providing an antireflex coating. For making silicon photo- electric cells, particularly solar cells, a great number of process steps have been required up to now, which in itself necessarily involves considerable manufacturing expenses. The specification discloses a manufacturing process for solar cells which compared with hitherto existing processes is much less complicated, and which with considerable reduced efforts can provide reliable and highly efficient solar cells, or photo- electric cells, in a very simple manner. This object is achieved by, after the application of aluminum and silicon onto the other surface of the Si-layer for providing the antireflex coating, subjecting the Si-layer to a heating process to lower the eutactic temperature of the aluminum-silicon in an inert atmosphere until Si-pyramids coated with a thin Al film are formed and subsequently partially removing the thin Al film to form a comb-shaped electrode on the Si-pyramids. According to the process of the present invention the semiconductor surface is covered with microscopically small pyramids and therefore a highly efficient antireflex and correspondly good light absorption properties result. Due to internal multi-reflections of the long-wave light between the back and front of the photoelectric cell, the semiconductor surface covered with the pyramid network correspondingly improves the efficiency of the cell.

314923

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