Method of making single-crystal mercury cadmium telluride...

Details Method of making single-crystal mercury cadmium telluride... Method of making single-crystal mercury cadmium telluride...

C - Chemistry, Metallurgy

30

B

148/2.55

C30B 29/48 (2006.01) C30B 19/04 (2006.01) H01L 21/368 (2006.01)

Patent

CA 1319588

Abstract A method is described of forming single crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate, performed inside a reactor with two communicating zones, kept at different and controlled temperatures. A growth solution is directly prepared inside the reactor by melting a weighed quantity of tellurium in one zone, vaporizing mercury in the other zone so that mercury vapour is absorbed by the molten tellurium, contacting the latter with solid cadmium telluride so as to saturate the solution, and removing the solution from contact with the solid cadmium telluride. The solution is cooled to produce supersaturation, and contacted with the substrate to produce epitaxial growth.

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