C - Chemistry – Metallurgy – 30 – B
Patent
C - Chemistry, Metallurgy
30
B
C30B 29/04 (2006.01) C23C 16/01 (2006.01) C23C 16/02 (2006.01) C23C 16/26 (2006.01)
Patent
CA 2108845
A method for making a free-standing synthetic diamond film of desired thickness, comprising the following steps: providing a substrate; selecting a target thickness of diamond to be produced, said target thickness being in the range 200 microns to 1000e microns; finishing a surface of the substrate to a roughness, RA, that is a function of the target thickness, said roughness being determined from 0.38/600 µm ~ RA ~ 0.50 µm 200 µm < t ~ 600 µm 0.38 µm ~ RA ~ 0.50 µm 600 µm < t < 1000 µm where t is the target thickness; depositing an interlayer on the substrate, the interlayer having a thickness in the range 1 to 20 microns; depositing synthetic diamond on said interlayer, by chemical vapor deposition, to about the target thickness; and cooing the synthetic diamond to effect the release thereof.
Frey Robert M.
Simpson Matthew
Gowling Lafleur Henderson Llp
Norton Company
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