G - Physics – 01 – N
Patent
G - Physics
01
N
G01N 27/22 (2006.01)
Patent
CA 2048904
This method comprises the following steps, which are com- patible with thin-film technology: forming a bottom electrode (2) on an insulating sub- strate (1), depositing a humidity-sensitive polymer layer (5) of uniform thickness on the bottom electrode (2) leaving contact areas (3a, 3b) uncovered, acti- vating surface bonds of the polymer layer (5), apply- ing a colloidal dispersion of SiO2 or Al2O3 particles (6) of uniform grain size as a thin layer to the poly- mer layer (5) and subsequently drying it, depositing a cover electrode (7) on the particles (6) still evenly distributed on the polymer layer (5) after the drying of the dispersion, and removing the particles (6) together with the portions of the cover electrode (7) overlying them.
Hegner Frank
Kallfass Traugott
Endress U. Hauser Gmbh U. Co.
Fetherstonhaugh & Co.
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