Method of manufacturing a charge transfer device

Details Method of manufacturing a charge transfer device Method of manufacturing a charge transfer device

H - Electricity

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356/197

H01L 29/76 (2006.01) H01L 21/033 (2006.01) H01L 21/339 (2006.01) H01L 21/8234 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1097429

ABSTRACT OF THE DISCLOSURE A method of manufacturing charge transfer devices in which an asymmetrical potential well in the direction of charge transfer is formed by the shape of narrower portions of a transfer channel which is bordered by highly doped channel stoppers. Impurities are diffused through a first mask into a polycrystalline silicon layer on the surface of a semiconductor substrate to construct transfer electrodes of highly doped polycrystalline layer. Then impurities are diffused into a semi- conductor substrate through openings bordering on one edge with a first mask to form the highly doped portions to make the narrower portions of the transfer channel to assure that the edges of the transfer electrode and the edge of the narrower portion are aligned.

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