H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/126
H01L 21/469 (2006.01) H01L 21/033 (2006.01) H01L 29/78 (2006.01)
Patent
CA 1129117
-1- ABSTRACT A silicon body of a first conductivity type is covered with a sandwich of silicon dioxide, polycrystalline silicon and silicon nitride. Source, drain, and inter- connect work sites of the body are exposed by a first photoshaping operation. The work sites are doped forming regions of a second conductivity type. Silicon dioxide is grown over the work sites. A second photoshaping operation provides an opening. The walls of the opening on two opposite sides comprise sides of the sandwich layer as established by the first photoshaping operation and the two remaining walls comprise sides of the silicon dioxide as established by the second photoshaping operation. Silicon nitride is next deposited over the entire wafer which is then photoshaped to define the field regions. The etching process is continued to remove part of the silicon body as well as the sides of those exposed regions. Thereafter, silicon dioxide is grown in the field regions. The remaining silicon nitride layer is removed to reveal the underlying conductive polycrystalline silicon at the gate region, the walls of the contact opening and the interconnect region. A conductive material is deposited over the wafer and then photoshaped to provide the desired pattern of ohmic interconnections.
330507
Kirby Eades Gale Baker
Teletype Corporation
LandOfFree
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