C - Chemistry – Metallurgy – 04 – B
Patent
C - Chemistry, Metallurgy
04
B
25/128
C04B 35/64 (2006.01) C04B 35/468 (2006.01) C04B 35/49 (2006.01) H01G 4/12 (2006.01)
Patent
CA 1193835
13 ABSTRACT: A method of manufacturing a dielectric from ferro-electric ceramic material having a perowskite structure according to the a reducing ABO3, in which the dielectric is sintered in a reducing atmosphere and the sintered body is after-treated at a temperature in the range from 500 to 900°C in an N2-O2 atmosphere with a quantity of O2 corresponding to a partial O2-pressure between 10-5 bar and 0.2 bar.
412060
Hagemann Hans-Jurgen
Hunten Siegfried
Klomp Cornelius J.
Noorlander Willem
Wernicke Rolf
Koninklijke Philips Electronics N.v.
Van Steinburg C.e.
LandOfFree
Method of manufacturing a dielectric does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a dielectric, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a dielectric will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1223481