Method of manufacturing a distributed feedback type...

Details Method of manufacturing a distributed feedback type... Method of manufacturing a distributed feedback type...

H - Electricity

01

S

345/32

H01S 3/05 (2006.01) H01S 3/098 (2006.01) H01S 5/12 (2006.01)

Patent

CA 1285057

ABSTRACT OF THE INVENTION A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.

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