H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/151
H01L 21/461 (2006.01) H01L 21/56 (2006.01)
Patent
CA 1226074
ABSTRACT OF THE DISCLOSURE A method is dislosed of manufacturing a glass passivation type semiconductor device of the type where- in a silicon semiconductor substrate of a first conductivity type is formed with a p-n junction by diffusing an impurity of a second conductivity type thereinto, recesses which reach the p-n junction are provided to expose the p-n junc- tion in the recesses, and the exposed parts of the p-n junction are covered with a low-melting glass. A method of manufacturing a glass passivation type semiconductor device according to this invention consists in that, using a printing mask, a glass is deposited on a whole surface of a wafer except for an outer periphery of the wafer or predetermined parts thereof necessary for alignment at a subsequent step, with the glass films at the bottoms of said recesses and the p-n junction parts being rendered at least 10 µm thick and glass films at the other parts being rendered 4-10 µm thick. Unnecessary portions of the glass films are subsequently removed by etching with a photoresist being used as a mask.
495455
Marks & Clerk
Mitsubishi Denki Kabushiki Kaisha
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