Method of manufacturing a metal oxide varistor

H - Electricity – 01 – C

Patent

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356/114

H01C 7/12 (2006.01)

Patent

CA 1092725

ABSTRACT OF THE DISCLOSURE Disclosed is a method of manufacturing a metal oxide varistor body. Conventional manufacturing techniques through sintering are utilized on any metal oxide varistor formulation which includes bismuth oxide. Following sintering, the devices are heat treated at a temperature between 750°C and 1200°C for a time in excess of about 10 hours. The heat treatment increases the alpha of the devices and substantially lowers the leakage current.

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