Method of manufacturing a monolithic semiconductor compound...

Details Method of manufacturing a monolithic semiconductor compound... Method of manufacturing a monolithic semiconductor compound...

C - Chemistry, Metallurgy

30

B

356/138, 148/3.2

C30B 1/00 (2006.01) H01L 21/00 (2006.01) H01L 21/32 (2006.01) H01L 21/762 (2006.01) H01L 21/82 (2006.01)

Patent

CA 1062589

ABSTRACT A process is described for isolating the elements of an insulated circuit from one another by a combination of trenches filled with SiO2 and p-n junctions, in which the zones each accommodate an element of the circuit and separated by insu- lation are produced from an n-conducting surface zone on a p- conducting silicon substrate using an Si3N4-etching mask to produce the trenches and subsequently using this mask as a doping mask for the doping by ion implantation of the floors of the trenches and as an oxidation mask for the subsequent pro- duction of an SiO2-layer in the trenches. - 1 -

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