Method of manufacturing a multilayer solar cell

H - Electricity – 01 – L

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H01L 29/06 (2006.01) H01L 31/075 (2006.01) H01L 31/18 (2006.01) H01L 31/20 (2006.01)

Patent

CA 2205882

A semiconductor structure and method of forming the structure, where a supporting substrate or superstrate (12) provides the mechanical strength to support overlying thin active regions. The thin dielectric layer (11) deposited over the substrate or superstrate (12) serves to isolate the deposited layers from the substrate from optical, metallurgical and/or chemical perspectives. A seeding layer (13) is then deposited, the seeding layer being of n-type silicon with appropriate treatments to give the desired large grain size. This layer may be crystallized as it is deposited, or may be deposited in amorphous form and then crystallized with further processing. A stack of alternating polarity layers (14, 15, 16, 17) of amorphous silicon or silicon alloy incorporating n-type or p-type dopants in the alternating layers is then deposited over the seeding layer. Solid phase crystallization is then performed to give the desired grain size of 3 µm or larger which can be achieved by extended heating of the layers at low temperature.

Cette invention concerne une structure semi-conductrice et son procédé de fabrication. La structure se compose d'un substrat, ou couche porteuse, (12) qui fournit la résistance mécanique nécessaire pour supporter les zones actives fines qui le recouvrent. La couche fine diélectrique (11) recouvrant le substrat ou couche porteuse (12) permet d'isoler les couches déposées sur le substrat sur le plan optique, métallurgique ou chimique. Une couche d'amorçage (13) est alors déposée, laquelle couche se compose de silicium de type n ayant été traité de manière à obtenir la grosseur de grain voulue. Cette couche peut être cristallisée avant d'être déposée, ou être appliquée sous forme amorphe avant d'être cristallisée par un traitement ultérieur. Un ensemble de couches à polarité alternative (14, 15, 16, 17), composées de silicium ou d'alliage de silicium amorphes contenant des dopants de type n ou p, est ensuite déposé sur la couche d'amorçage. On procède alors à la phase solide de cristallisation pour obtenir la grosseur de grain de 3 mu m ou plus souhaitée, et ce par un chauffage prolongé et à faible température de ces couches.

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