H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/136
H01L 21/60 (2006.01) H01L 21/285 (2006.01) H01L 21/768 (2006.01)
Patent
CA 1294716
PHA 1147 20 13.3.1987 ABSTRACT: Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material. A planar electrical interconnection system suitable for an integrated circuit is created by a process in which an insulating layer (31) having a planar upper surface is formed on a substructure after which openings (32) are etched through the insulating layer, A conductive planarizing layer (33) having a planar upper surface is formed on the insulating layer and in the openings by an operation involving isotropic deposition of a material, preferably tungsten, to create at least a portion of the planarizing layer extending from its upper surface partway into the openings. The planarizing layer is then etched down to the insulating layer. Consequently, its upper surface is coplanar with that of the material (33') in the openings. The foregoing steps are repeated to create another coplanar conductive/ insulating layer (34 and 36'). If the lower openings are vias while the upper openings are grooves, the result is a planar interconnect level. Further planar interconnect levels can be formed in the same way.
547692
Fetherstonhaugh & Co.
Koninklijke Philips Electronics N.v.
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