Method of manufacturing a semi-conductor device employing...

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H01L 21/18 (2006.01) H01L 21/00 (2006.01) H01L 21/265 (2006.01) H01L 21/314 (2006.01) H01L 21/316 (2006.01) H01L 21/318 (2006.01) H01L 23/29 (2006.01) H01L 23/31 (2006.01) H01L 29/8605 (2006.01)

Patent

CA 1071772

ABSTRACT OF THE DISCLOSURE An oxygen or nitrogen ion beam is implanted into a polycrystalline silicon or in an amorphous silicon layer, or a single crystal device body or layer, on a semiconductor substrate to an extent sufficient to convert the polycrystalline silicon layer, the amorphous layer or the single crystal device body or layer into a semi-insulating layer having a resistivity of 107 to 1011 ohm-cm, which has improved passivation property.

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