Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

H - Electricity

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356/149, 356/172

H01L 29/76 (2006.01) H01L 21/225 (2006.01) H01L 21/265 (2006.01) H01L 21/3215 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1110780

ABSTRACT: A method of manufacturing a semiconductor device having at least one insulated gate field effect transistor in which a silicon body is provided with a silicon dioxide gate insulation layer and in which a boron-doped polysilicon electrode layer is formed on said layer, characterized in that the electrode layer is deposited by means of a low-pressure process, that the boron doping of the electrode layer is obtained by ion implantation, and that the silicon body is then subjected to a thermal treatment in an atmosphere con- taining hydrogen in which boron is diffused from the electrode layer through the gate insulation layer in- to a channel region underlying the electrode layer. - 11 -

311764

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