Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

H - Electricity

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H01L 21/302 (2006.01) G03F 7/42 (2006.01) H01L 21/311 (2006.01)

Patent

CA 1165902

PHN 9793 18-2-1981 ABSTRACT "Method of manufacturing a semiconductor device". A method of manufacturing a semiconductor device in which an organic lacquer layer which is locally present on a substrate is etched by bringing the layer into contact with constituents of plasma which is formed in a gas mixture which contains a halogen compound and an oxygen compound. If the mixture contains more than 25 % by volume of an oxygen compound from the group CO2 and NO, the organic lacquer layer can be etched away from 500 to 1000 times faster than poly Si.

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