Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

H - Electricity

01

L

356/148

H01L 21/30 (2006.01) H01L 21/22 (2006.01) H01L 21/761 (2006.01) H01L 21/8238 (2006.01) H01L 29/06 (2006.01) H01L 27/092 (2006.01)

Patent

CA 1165012

PHN. 9738 -15- ABSTRACT: A method of manufacturing a semiconductor device having two juxtaposed regions of opposite conductivity types which adjoin a surface and which together constitute a p-n junction which is preferably perpendicular to the surface and the doping concentration of which decreases towards the surface. According to the invention n-type and p-type buried layers are provided beside each other on a semiconductor sub- strate and on said layers a high-ohmic epitaxial layer is grown. By heating, the dopants diffuse from the buried layers through the whole thickness of the epitaxial layer and into the substrate. With suitably chosen donor and acceptor atoms (for example boron and phosphorous in silicon) n and p-type regions are formed in the epitaxial layer and form a p-n junction perpendicular to the surface by compensation of lateral diffusions from the buried layers.

376122

Affiliated with

Also associated with

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-935952