Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

H - Electricity

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H01L 21/306 (2006.01) H01L 21/3065 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1165903

PHN 9792 -9- 18-2-l981 ABSTRACT: "Method of manufacturing a semiconductor device". A method of manufacturing a semiconductor device where a layer which is present on a substrate and which is locally covered with an organic lacquer layer is etched by bringing the layer into contact with constituents of a plasma which is formed in a gas mixture containing a halogen compound and an oxygen compound. The rate at which the organic lacquer layer is removed by the con- stituents of the plasma is substantially reduced by the addition of from 1 to 15 % by vol. of CO to this gas mixture.

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