Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

H - Electricity

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356/147, 356/176

H01L 21/265 (2006.01) C30B 31/22 (2006.01) H01L 21/033 (2006.01) H01L 21/266 (2006.01) H01L 21/82 (2006.01) H01L 21/8238 (2006.01)

Patent

CA 1330648

33 ABSTRACT: Method of manufacturing a semiconductor device. A method, in which an implantation treatment is carried out at a high energy of implantation in a semiconductor body (1) provided with a pattern of field insulation (6a) and in which the semiconductor body is provided with a masking, which comprises a comparatively thin layer (8), a second comparatively thick layer (9) of a semi-masking material and a third comparatively thin layer (10). The second layer (9) isprovided with openings (12) and the first layer (8) covers at least those parts of the surface which correspond to these openings (12). The third layer (10) has openings (22) each corresponding to one of the openings (12). The material of the first lay- er (8) differs from that of the second layer (9) and the material of the second layer (9) differs from that of the third layer (10). Preferably, simultaneously with the second layer (9) on the front side a semiconductor layer (19) is provided on the back side (3) of the semiconductor body (1). Fig. 1.

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