Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

H - Electricity

01

L

356/151

H01L 21/465 (2006.01) H01L 21/033 (2006.01) H01L 21/265 (2006.01)

Patent

CA 1252915

11 ABSTRACT: "Method of manufacturing a semiconductor device". A method of manufacturing a semiconductor device having at least one narrow and comparatively deep groove (3) in the semiconductor surface, while zones (9) are implanted in the walls and/or the bottom of the groove over only part of the groove length. According to the invention, the implantation mask is provided on a filler material (6), which fills the groove and is removed after the masking layer (7) has been provided. The filler material preferably consists of a photo-resist. Fig. 4.

520216

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