H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/126
H01L 21/28 (2006.01) H01L 21/033 (2006.01) H01L 21/321 (2006.01) H01L 21/768 (2006.01) H01L 21/8238 (2006.01)
Patent
CA 1176761
PHN 9922 11.11.1981 ABSTRACT. Method of manufacturing a semiconductor device. A method of manufacturing an integrated cir- cuit having at least an insulated gate field effect transistor (IGFET). Provided on the silicon surface (2) are successively a gate oxide layer (15) and a doped sili- con layer (16) which are patterned by etching by means of a silicon nitride-containing mask (17) which comprises the gate electrode(s) (16A, B) and interconnections (16C). Nitrogen ions are implanted in the surface parts not under- lying the mask (17). By thermal oxidation only the edges of the silicon pattern (16) are oxidized. By ion implanta- tion the source and drain zones (23, 24, 27, 28) are formed, the gate electrodes serving as an implantation mask. If desired, the threshold voltage may then be adjusted by ion implantation in the channel region via the gate electrode. The invention is of particular importance for the manu- facture of complementary IGFET pairs in which a transistor is provided in a bowl-shaped zone (11) which is bounded by a p-n junction (14) terminating at the surface between a boron-doped p-type (13) and an adjoining phosphorus- doped n-type channel stopper zone (7).
392596
Solo de Zaldivar Jose
Koninklijke Philips Electronics N.v.
Van Steinburg C.e.
LandOfFree
Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1272299